Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both record efficiency and output power for an enhancement-mode (E-mode) device operating at low supply voltage.
Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
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